Nexperia BSH205G2R

The Nexperia BSH205G2R is a small signal MOSFET transistor with an N-channel configuration. It features a low on-resistance of 0.3 ohms and a maximum drain current of 1.8A, making it suitable for a wide range of applications such as switching and amplification. The transistor has a maximum gate-source voltage of +/-20V and a maximum power dissipation of 625mW. Operating at a temperature range of -55°C to 150°C, the BSH205G2R is reliable and stable even in harsh environments. The transistor is available in a SOT-23 surface mount package, allowing for easy integration into various electronic circuits.

Overall, the Nexperia BSH205G2R is a high-performing MOSFET transistor that can handle a variety of tasks with ease. Its low on-resistance and high drain current make it ideal for switching and amplification applications, while its small package size and wide temperature range make it a versatile option for integration into many different electronic circuits. With its reliability and stability, the BSH205G2R is a valuable component for any electronics engineer looking for a dependable MOSFET transistor

Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	418 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Cut Tape (CT)
Power Dissipation (Max)	480mW (Ta)
Rds On (Max) @ Id, Vgs	170mOhm @ 2A, 4.5V
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	950mV @ 250µA