onsemi MMBFJ112
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See Product Specifications.
See Product Specifications.
Stock Code
035232
035232
Manufacturer / Brand
onsemi
Part Number
MMBFJ112
MMBFJ112
Unit Price
$0.3320
$0.3320
Factory Lead-Time
43 Weeks
43 Weeks
Short Description
N-Channel JFET Transistor
N-Channel JFET Transistor
Datasheet
In Stock: 44929
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.3320 | $0.3320 | |
| 10 | $0.2490 | $2.4900 | -25% |
| 100 | $0.1550 | $15.5000 | -53.31% |
| 500 | $0.1060 | $53.0000 | -68.07% |
| 1000 | $0.0816 | $81.6000 | -75.42% |
Description
The ONSEMI MMBFJ112 is a small signal N-channel field-effect transistor (FET) designed for low power, high-speed applications. It has a maximum drain-source voltage of 40V and a continuous drain current of 225mA. This FET features a low gate-source threshold voltage, a low on-resistance, and high input impedance, which make it ideal for use in low voltage, low current applications such as amplifiers, oscillators, and switching circuits. With a small package size and a high level of reliability, the MMBFJ112 is suitable for use in a wide range of industrial and consumer electronics applications.
The MMBFJ112 is manufactured using a silicon gate technology, which ensures high performance, reliability, and stability over a wide temperature range. It has an input capacitance of 7pF, an output capacitance of 2pF, and a total gate charge of 5nC, which enables it to switch quickly and efficiently. Additionally, this FET has a low noise figure and provides a high level of isolation between the gate and drain. Its small size and ease of integration with other electronic components make it a popular choice among engineers and designers looking for a cost-effective, high-performance solution for their low-power applications
The MMBFJ112 is manufactured using a silicon gate technology, which ensures high performance, reliability, and stability over a wide temperature range. It has an input capacitance of 7pF, an output capacitance of 2pF, and a total gate charge of 5nC, which enables it to switch quickly and efficiently. Additionally, this FET has a low noise figure and provides a high level of isolation between the gate and drain. Its small size and ease of integration with other electronic components make it a popular choice among engineers and designers looking for a cost-effective, high-performance solution for their low-power applications
Product Attributes
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 50 Ohms |
| Supplier Device Package | SOT-23-3 |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 µA |
