Vishay SIS488DN-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
037001
037001
Manufacturer / Brand
Vishay
Part Number
SIS488DN-T1-GE3
SIS488DN-T1-GE3
Unit Price
$0.6300
$0.6300
Factory Lead-Time
75 Weeks
75 Weeks
Short Description
MOSFET, N-CHANNEL, 30V, 17A, 6.5MOHM, POWERPAK SO-8
MOSFET, N-CHANNEL, 30V, 17A, 6.5MOHM, POWERPAK SO-8
Datasheet
In Stock: 7980
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.6300 | $0.6300 | |
| 10 | $0.5640 | $5.6400 | -10.48% |
| 100 | $0.4400 | $44.0000 | -30.16% |
| 500 | $0.3630 | $181.5000 | -42.38% |
| 1000 | $0.2870 | $287.0000 | -54.44% |
Description
The Vishay SIS488DN-T1-GE3 is a power MOSFET transistor that is designed for use in a wide range of industrial and consumer applications. It features a low on-resistance, high current handling capability, and a compact design, which makes it ideal for use in high-density power switching applications. The SIS488DN-T1-GE3 is built using the latest MOSFET technology and has been optimized for use in switching power supplies, DC-DC converters, motor control, and other high-performance power applications.
The Vishay SIS488DN-T1-GE3 features a maximum drain-source voltage of 80V and a maximum continuous drain current of 38A. It has a typical on-resistance of 11.5mΩ at a gate-source voltage of 10V, which makes it ideal for high-frequency switching applications. The MOSFET also features a low gate charge and a fast switching speed, which further enhances its suitability for high-frequency power applications. The SIS488DN-T1-GE3 is available in a compact, surface-mount package that measures just 5mm x 6mm x 0.9mm, making it easy to integrate into space-constrained designs
The Vishay SIS488DN-T1-GE3 features a maximum drain-source voltage of 80V and a maximum continuous drain current of 38A. It has a typical on-resistance of 11.5mΩ at a gate-source voltage of 10V, which makes it ideal for high-frequency switching applications. The MOSFET also features a low gate charge and a fast switching speed, which further enhances its suitability for high-frequency power applications. The SIS488DN-T1-GE3 is available in a compact, surface-mount package that measures just 5mm x 6mm x 0.9mm, making it easy to integrate into space-constrained designs
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® 1212-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| Supplier Device Package | PowerPAK® 1212-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
