onsemi NTMFS5H600NLT1G

The Onsemi NTMFS5H600NLT1G is a high-performance MOSFET designed for use in power applications. With a low on-resistance and high current capacity, it is capable of handling large loads with minimal voltage drop and heat dissipation. This MOSFET features a thermally enhanced package that helps to improve its thermal performance, making it suitable for use in high-temperature environments. It also has a low gate charge, which reduces switching losses and improves efficiency. The device is designed to operate at high frequency, making it ideal for use in applications such as power supplies, motor control, and other high-performance electronics.

This MOSFET is part of the ON Semiconductor Power MOSFET portfolio, which offers a wide range of voltage and current options to meet the needs of different applications. It features a standard gate drive voltage range, making it compatible with a variety of gate driver circuits. The NTMFS5H600NLT1G also has a low profile, surface-mount package, which helps to reduce the footprint of the circuit board and save space in tight designs. Overall, the Onsemi NTMFS5H600NLT1G is a reliable and high-performance MOSFET that can deliver efficient power handling and thermal performance in a range of power applications

Current - Continuous Drain (Id) @ 25°C	35A (Ta), 250A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6680 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN, 5 Leads
Packaging	Cut Tape (CT)
Power Dissipation (Max)	3.3W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs	1.3mOhm @ 50A, 10V
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA