Infineon IRF5210SPBF

The Infineon IRF5210SPBF is an N-channel power MOSFET transistor that has a maximum voltage rating of 100 volts and a continuous drain current of 12 amperes. It is designed for use in a variety of applications, including power switching, motor control, and audio amplifiers. The transistor has a low gate threshold voltage of between 2 and 4 volts and a fast switching speed, making it suitable for high-frequency switching applications. The IRF5210SPBF also features a low on-resistance of 0.04 ohms, which helps to minimize power loss and increase efficiency. Its compact and rugged design makes it ideal for use in harsh environments, and its high thermal conductivity helps to dissipate heat quickly, allowing it to perform reliably under heavy loads.

Overall, the Infineon IRF5210SPBF is a versatile and high-performance transistor that is ideal for a wide range of applications. Its low on-resistance, fast switching speed, and high voltage and current ratings make it perfect for demanding applications that require exceptional performance and durability. Whether you are using it in a power switching application, a motor control system, or an audio amplifier, the IRF5210SPBF is sure to deliver outstanding performance and reliability

Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging	Tube
Part Status	Discontinued at Digi-Key
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs	60mOhm @ 38A, 10V
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA