Fairchild FDB38N30U

The Fairchild FDB38N30U is a MOSFET transistor that features a drain-source voltage rating of 300V and a continuous drain current rating of 38A. It has a low on-resistance of 40mΩ and a gate threshold voltage of 3.0V, making this device suitable for use in high-power applications such as switching power supplies, motor control, and lighting ballasts. The FDB38N30U utilizes Fairchild's advanced Power Trench technology, which improves performance by reducing the device's on-resistance and switching losses. Additionally, this MOSFET offers high immunity to electromagnetic interference and a reduced gate charge, which improves switching speed and device efficiency.

The FDB38N30U is housed in a TO-263 package that features a low thermal resistance, improving the MOSFET's thermal handling capabilities. The packaging also provides improved thermal management when compared to traditional packages, such as TO-220 and TO-262. The device's low on-resistance reduces conduction loses and improves device efficiency, while its high gate threshold voltage makes the device easy to drive. In summary, this MOSFET offers exceptional performance, making it a popular choice in high-power applications where reliability and efficiency are essential

Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3340 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging	Cut Tape (CT)
Power Dissipation (Max)	313W (Tc)
Rds On (Max) @ Id, Vgs	120mOhm @ 19A, 10V
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA