Infineon IRF530PBF
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See Product Specifications.
See Product Specifications.
Stock Code 003930
003930
Manufacturer / Brand
Infineon Part Number IRF530PBF
IRF530PBF
Unit Price $0.9100
$0.9100
Factory Lead-Time 16 Weeks
16 Weeks
Short Description Power MOSFET Transistor
Power MOSFET Transistor
Datasheet
In Stock: 17406
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.9100 | $0.9100 | |
| 10 | $0.8160 | $8.1600 | -10.33% |
| 100 | $0.7180 | $71.8000 | -21.1% |
| 500 | $0.5940 | $297.0000 | -34.73% |
| 1000 | $0.5090 | $509.0000 | -44.07% |
| 2000 | $0.4770 | $954.0000 | -47.58% |
| 5000 | $0.3680 | $1,840.0000 | -59.56% |
| 10000 | $0.3540 | $3,540.0000 | -61.1% |
Description
The Infineon IRF530PBF is a power MOSFET transistor that utilizes a Metal-Oxide Semiconductor (MOS) technology. It is designed to handle high voltage and power loads efficiently, making it ideal for use in a wide range of applications including power supplies, DC-DC converters, motor control circuits, and switching regulators.
The transistor is constructed using N-channel technology, which allows it to operate with low on-resistance and high switching speeds. It has a maximum voltage rating of 100V and a maximum current rating of 14A, making it capable of handling high-power loads. The transistor also features a low gate charge, which means it can be turned on and off quickly and easily by a control signal. This makes it ideal for use in circuits that require high-speed switching. The IRF530PBF is housed in a TO-220 package, which provides good thermal conductivity and allows for easy mounting onto a heat sink for improved heat dissipation. Overall, the Infineon IRF530PBF is a reliable and efficient power MOSFET transistor that can be used in a wide range of applications where high power handling and high-speed switching are required
The transistor is constructed using N-channel technology, which allows it to operate with low on-resistance and high switching speeds. It has a maximum voltage rating of 100V and a maximum current rating of 14A, making it capable of handling high-power loads. The transistor also features a low gate charge, which means it can be turned on and off quickly and easily by a control signal. This makes it ideal for use in circuits that require high-speed switching. The IRF530PBF is housed in a TO-220 package, which provides good thermal conductivity and allows for easy mounting onto a heat sink for improved heat dissipation. Overall, the Infineon IRF530PBF is a reliable and efficient power MOSFET transistor that can be used in a wide range of applications where high power handling and high-speed switching are required
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power Dissipation (Max) | 88W (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.4A, 10V |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
