Vishay SI2307BDS-T1-GE3
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
004135
004135
Manufacturer / Brand
Vishay
Part Number
SI2307BDS-T1-GE3
SI2307BDS-T1-GE3
Unit Price
$0.3840
$0.3840
Factory Lead-Time
50 Weeks
50 Weeks
Short Description
N-ch MOSFET, 20V, 5.7A, 7.2 mOhm
N-ch MOSFET, 20V, 5.7A, 7.2 mOhm
Datasheet
In Stock: 6367
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.3840 | $0.3840 | |
| 10 | $0.3380 | $3.3800 | -11.98% |
| 100 | $0.2590 | $25.9000 | -32.55% |
| 500 | $0.2050 | $102.5000 | -46.61% |
| 1000 | $0.1640 | $164.0000 | -57.29% |
Description
The Vishay SI2307BDS-T1-GE3 is an N-channel MOSFET transistor that is specifically designed to be used in the power management systems of portable devices. The device has a maximum drain-source voltage of 20V and a drain current of 5.2A. The transistor has a low on-resistance, which means that it can handle high power dissipations without causing excessive heat buildup.
The Vishay SI2307BDS-T1-GE3 comes in a SOT-23 surface mount package, which makes it ideal for use in compact designs where space is at a premium. The package also features a high-temperature rating, which means that the transistor can be used in environments with high ambient temperatures without suffering from damage or performance degradation. The device is RoHS compliant and is suitable for use in lead-free manufacturing processes, making it an environmentally-friendly choice
The Vishay SI2307BDS-T1-GE3 comes in a SOT-23 surface mount package, which makes it ideal for use in compact designs where space is at a premium. The package also features a high-temperature rating, which means that the transistor can be used in environments with high ambient temperatures without suffering from damage or performance degradation. The device is RoHS compliant and is suitable for use in lead-free manufacturing processes, making it an environmentally-friendly choice
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 15 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 750mW (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 3.2A, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
