Vishay SI2307CDS-T1-GE3
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
005182
005182
Manufacturer / Brand
Vishay
Part Number
SI2307CDS-T1-GE3
SI2307CDS-T1-GE3
Unit Price
$0.3320
$0.3320
Factory Lead-Time
67 Weeks
67 Weeks
Short Description
N-channel 30V MOSFET in compact SOT-23 package
N-channel 30V MOSFET in compact SOT-23 package
Datasheet
In Stock: 19064
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.3320 | $0.3320 | |
| 10 | $0.2810 | $2.8100 | -15.36% |
| 100 | $0.2100 | $21.0000 | -36.75% |
| 500 | $0.1650 | $82.5000 | -50.3% |
| 1000 | $0.1280 | $128.0000 | -61.45% |
| 3000 | $0.1160 | $348.0000 | -65.06% |
Description
The Vishay SI2307CDS-T1-GE3 is a P-channel MOSFET transistor that boasts a low on-resistance (RDS(ON)) of 28mΩ at a gate-source voltage of -4.5V. It is designed to operate on a maximum drain-source voltage of -20V and a maximum gate-source voltage of ±12V, making it ideal for power management and load switch applications. This transistor is housed in a compact SOT-23 package and features a high peak current capability, making it suitable for use in battery-powered applications. Additionally, it has an advanced trench MOSFET process that ensures high reliability and performance.
With its high power density and small package size, the Vishay SI2307CDS-T1-GE3 offers excellent thermal performance and outstanding ESD protection. It can operate in temperatures ranging from -55°C to 150°C, making it suitable for use in harsh environments. Its low gate threshold voltage and fast switching speed make it ideal for high-performance switching applications that require low power losses. Overall, the Vishay SI2307CDS-T1-GE3 is a reliable and efficient MOSFET transistor that offers exceptional performance in a compact package
With its high power density and small package size, the Vishay SI2307CDS-T1-GE3 offers excellent thermal performance and outstanding ESD protection. It can operate in temperatures ranging from -55°C to 150°C, making it suitable for use in harsh environments. Its low gate threshold voltage and fast switching speed make it ideal for high-performance switching applications that require low power losses. Overall, the Vishay SI2307CDS-T1-GE3 is a reliable and efficient MOSFET transistor that offers exceptional performance in a compact package
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 15 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 1.1W (Ta), 1.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 3.5A, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
