Infineon IPP60R180C7XKSA1
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See Product Specifications.
See Product Specifications.
Stock Code 007280
007280
Manufacturer / Brand
Infineon Part Number IPP60R180C7XKSA1
IPP60R180C7XKSA1
Unit Price $2.2000
$2.2000
Factory Lead-Time 52 Weeks
52 Weeks
Short Description 600V CoolMOS™ C7 superjunction MOSFET in TO-220 package
600V CoolMOS™ C7 superjunction MOSFET in TO-220 package
In Stock: 230
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $2.2000 | $2.2000 | |
| 10 | $1.9700 | $19.7000 | -10.45% |
| 100 | $1.6200 | $162.0000 | -26.36% |
| 500 | $1.3800 | $690.0000 | -37.27% |
| 1000 | $1.1600 | $1,160.0000 | -47.27% |
| 2000 | $1.1000 | $2,200.0000 | -50% |
| 5000 | $1.0600 | $5,300.0000 | -51.82% |
Description
Infineon IPP60R180C7XKSA1 is a MOSFET power transistor designed for power conversion applications. This device features a low on-resistance of only 0.18ohms and a high drain current rating of 60 amps. It is optimized for use in high-power applications such as solar inverters, UPS systems, and motor drives. The IPP60R180C7XKSA1 was created using advanced trench technology to ensure high switching speed, low conduction losses, and improved thermal performance. Additionally, it is housed in a TO-220 package to aid in thermal dissipation.
This device has a gate-source voltage of +/- 20V and a threshold voltage of approximately 4V, making it easy to operate with standard logic level signals. It also features a maximum junction temperature of 175 degrees Celsius, ensuring its reliability under extreme conditions. The Infineon IPP60R180C7XKSA1 provides an excellent solution for designers looking for an efficient, high-power transistors for use in demanding applications
This device has a gate-source voltage of +/- 20V and a threshold voltage of approximately 4V, making it easy to operate with standard logic level signals. It also features a maximum junction temperature of 175 degrees Celsius, ensuring its reliability under extreme conditions. The Infineon IPP60R180C7XKSA1 provides an excellent solution for designers looking for an efficient, high-power transistors for use in demanding applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 400 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power Dissipation (Max) | 68W (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.3A, 10V |
| Supplier Device Package | PG-TO220-3-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 260µA |
