STMicroelectronics STP45N40DM2AG
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See Product Specifications.
See Product Specifications.
Stock Code
007555
007555
Manufacturer / Brand
STMicroelectronics
Part Number
STP45N40DM2AG
STP45N40DM2AG
Unit Price
$4.3200
$4.3200
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
Power MOSFET 400V 41A 125W TO-220-3
Power MOSFET 400V 41A 125W TO-220-3
In Stock: 4637
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $4.3200 | $4.3200 | |
| 10 | $3.9100 | $39.1000 | -9.49% |
| 100 | $3.2300 | $323.0000 | -25.23% |
| 500 | $2.8200 | $1,410.0000 | -34.72% |
| 1000 | $2.4500 | $2,450.0000 | -43.29% |
| 2000 | $2.3600 | $4,720.0000 | -45.37% |
Description
The STMicroelectronics STP45N40DM2AG is a power MOSFET transistor designed for high-performance applications. This MOSFET is part of the SuperMESH™ series, which has been optimized to provide low on-state resistance, fast switching performance, and high thermal efficiency. With its low thermal resistance and maximum power dissipation of 450 watts, this device can handle high-temperature applications with ease.
In addition to its robust thermal performance, the STP45N40DM2AG also features a gate-source voltage rating of ±20 volts, making it compatible with a wide range of applications. Its zero gate voltage drain current (I_DSS) of 10 microamperes ensures that the transistor is switched off when not in use, preventing overheating and reducing energy consumption. The STP45N40DM2AG is an ideal choice for high-power switching applications where thermal efficiency and reliability are crucial
In addition to its robust thermal performance, the STP45N40DM2AG also features a gate-source voltage rating of ±20 volts, making it compatible with a wide range of applications. Its zero gate voltage drain current (I_DSS) of 10 microamperes ensures that the transistor is switched off when not in use, preventing overheating and reducing energy consumption. The STP45N40DM2AG is an ideal choice for high-power switching applications where thermal efficiency and reliability are crucial
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drain to Source Voltage (Vdss) | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 100 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 19A, 10V |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
