Toshiba CUS10S30,H3F
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See Product Specifications.
See Product Specifications.
Stock Code
007961
007961
Manufacturer / Brand
Toshiba
Part Number
CUS10S30,H3F
CUS10S30,H3F
Categories
Unit Price
$0.2280
$0.2280
Factory Lead-Time
22 Weeks
22 Weeks
Short Description
Toshiba capacitor, 10uF, 30V, H3F series
Toshiba capacitor, 10uF, 30V, H3F series
Datasheet
In Stock: 95686
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.2280 | $0.2280 | |
| 10 | $0.1720 | $1.7200 | -24.56% |
| 100 | $0.0970 | $9.7000 | -57.46% |
| 500 | $0.0643 | $32.1500 | -71.8% |
| 1000 | $0.0493 | $49.3000 | -78.38% |
| 3000 | $0.0428 | $128.4000 | -81.23% |
| 6000 | $0.0385 | $231.0000 | -83.11% |
| 15000 | $0.0343 | $514.5000 | -84.96% |
| 30000 | $0.0321 | $963.0000 | -85.92% |
| 75000 | $0.0312 | $2,340.0000 | -86.32% |
Description
The Toshiba CUS10S30,H3F is a high-performance silicon carbide (SiC) MOSFET technology power semiconductor module suitable for a range of power electronic applications. This module has been designed to offer high levels of performance, reliability and efficiency in demanding applications including industrial drives, electric vehicles and renewable energy systems. It operates at a maximum voltage of 1200V and can handle a maximum current of 12A.
The Toshiba CUS10S30,H3F uses advanced semiconductor technology to achieve high levels of performance. The SiC MOSFET technology offers many advantages over traditional silicon-based devices, including lower on-resistance, higher operating temperatures, and faster switching speeds. The module is designed with low inductance and low capacitance resulting in fast switching and low losses. Its small form factor and high reliability make it an ideal choice for modern high-performance power electronic systems
The Toshiba CUS10S30,H3F uses advanced semiconductor technology to achieve high levels of performance. The SiC MOSFET technology offers many advantages over traditional silicon-based devices, including lower on-resistance, higher operating temperatures, and faster switching speeds. The module is designed with low inductance and low capacitance resulting in fast switching and low losses. Its small form factor and high reliability make it an ideal choice for modern high-performance power electronic systems
Product Attributes
| Base Product Number | CUS10S30 |
| Capacitance @ Vr, F | 135pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 500 µA @ 30 V |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 125°C (Max) |
| Package / Case | SC-76, SOD-323 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | USC |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 230 mV @ 100 mA |
