Infineon IRLML6401TRPBF
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
008167
008167
Manufacturer / Brand
Infineon
Part Number
IRLML6401TRPBF
IRLML6401TRPBF
Unit Price
$0.2990
$0.2990
Factory Lead-Time
43 Weeks
43 Weeks
Short Description
PMOS transistor, 12V, 4.1 mOhm, 6.3A
PMOS transistor, 12V, 4.1 mOhm, 6.3A
Datasheet
In Stock: 14490
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.2990 | $0.2990 | |
| 10 | $0.2440 | $2.4400 | -18.39% |
| 100 | $0.1660 | $16.6000 | -44.48% |
| 500 | $0.1240 | $62.0000 | -58.53% |
| 1000 | $0.0933 | $93.3000 | -68.8% |
Description
The Infineon IRLML6401TRPBF is a P-channel MOSFET transistor designed for use in low voltage applications. It features a maximum drain-source voltage of -12V and maximum continuous drain current of -2.7A, making it suitable for use in a variety of applications including power management, load switching, and battery protection circuits. The device is housed in a lead-free SOT-23-3 package and is RoHS compliant.
The IRLML6401TRPBF offers a low on-resistance of only 98mOhm, which allows it to reduce power loss and increase efficiency in power management circuits. It also has a fast switching time of less than 25ns and a low gate threshold voltage of -1.0V, which makes it suitable for use in low voltage applications. The device is designed with a high-density process, which provides excellent performance and reliability for a wide range of applications
The IRLML6401TRPBF offers a low on-resistance of only 98mOhm, which allows it to reduce power loss and increase efficiency in power management circuits. It also has a fast switching time of less than 25ns and a low gate threshold voltage of -1.0V, which makes it suitable for use in low voltage applications. The device is designed with a high-density process, which provides excellent performance and reliability for a wide range of applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V |
| Supplier Device Package | Micro3™/SOT-23 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
