Fairchild BS170

Fairchild BS170 is a type of N-channel, enhancement mode field-effect transistor (FET) that operates in the 60V range. It is designed to work as a switch for low power applications including audio amplifiers, power supplies, signal processing circuits, and voltage regulators. The transistor requires a small voltage at the gate to control the current flow through the channel between the source and drain. It can handle a maximum current of 0.5A and dissipate up to 0.8W of power while maintaining low on-resistance and negligible gate leakage current. The BS170 is available in a variety of packages including TO-92, SOT-23, and SOIC, providing flexibility in circuit integration. It has been widely used in portable electronics, battery charging circuits, and automotive systems due to its low cost, low noise, and high reliability.

In terms of electrical performance, the Fairchild BS170 offers a fast switching speed, allowing it to switch states quickly in response to a gate voltage change. It has a typical on-resistance of 5.0Ω at a gate source voltage of 10V, meaning that it can conduct current with minimum losses. The transistor also maintains a high input impedance, which makes it ideal for use in high impedance circuits. Additionally, the BS170 exhibits low capacitance values, which again improves its effectiveness in high frequency and low noise applications. To summarize, the BS170 transistor is an excellent and cost-effective choice for simplifying low power circuitry

Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Packaging	Bulk
Power Dissipation (Max)	830mW (Ta)
Rds On (Max) @ Id, Vgs	5Ohm @ 200mA, 10V
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 1mA