onsemi LE25U40CMDTWG

The ON Semiconductor LE25U40CMDTWG is a 4-megabyte, EEPROM-based non-volatile memory device. It operates on a supply voltage range between 2.5V and 5.5V and can withstand a maximum voltage of 6.5V during a programming pulse. The device has a 32-byte page write buffer that helps in reducing the overall programming time. The device also supports various write protection modes like hardware write protection and software write protection. Hardware write protection can be enabled or disabled by using an external pin. Software write protection can be done by setting a flag through the SPI interface. The device has a high-speed SPI compatible interface that allows for up to 50MHz clock speed and provides other features like SPI mode 0 and 3, double data rate, and quad data rate. It has a capacity of 4 megabytes organized in 32 sectors. The device also has a very low power consumption, with a standby current of just 2 microamperes and an active current of up to 10 milliamperes.

Overall, the ON Semiconductor LE25U40CMDTWG is a high-performance and reliable memory device that can be used in various applications, including automotive, industrial, and consumer electronics. It has a high endurance and can withstand up to 1 million cycles of erase/write operations. The device also has a 100-year data retention capability, ensuring that the stored data remains secure and long-lasting. With its many features and capabilities, this memory device is an excellent choice for applications that require high-speed, high-capacity, and low power consumption memory

Clock Frequency	40 MHz
Digi-Key Programmable	Not Verified
Memory Format	FLASH
Memory Interface	SPI
Memory Organization	512K x 8
Memory Size	4Mbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature	-40°C ~ 85°C (TA)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Packaging	Cut Tape (CT)
Part Status	Last Time Buy
Supplier Device Package	8-SOIC
Technology	FLASH
Voltage - Supply	2.3V ~ 3.6V
Write Cycle Time - Word, Page	5ms