Vishay SUM70040E-GE3
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See Product Specifications.
See Product Specifications.
Stock Code 011725
011725
Manufacturer / Brand
Vishay Part Number SUM70040E-GE3
SUM70040E-GE3
Unit Price $1.9900
$1.9900
Factory Lead-Time 97 Weeks
97 Weeks
Short Description 700V MOSFET for high-frequency power conversion
700V MOSFET for high-frequency power conversion
Datasheet
In Stock: 1863
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.9900 | $1.9900 | |
| 10 | $1.7900 | $17.9000 | -10.05% |
| 100 | $1.4600 | $146.0000 | -26.63% |
Description
The Vishay SUM70040E-GE3 is a high-power, surface-mount MOSFET transistor designed to operate in applications where high current switching is required. With its low on-resistance, it is able to handle high current loads while minimizing power dissipation, making it suitable for use in high-efficiency power conversion circuits.
The device features a rugged and reliable design, with its components constructed from high-quality materials that are capable of withstanding harsh operating conditions. It also has a compact footprint, with its small size and surface-mount package allowing it to be easily integrated into a variety of different circuit designs. Overall, the Vishay SUM70040E-GE3 is an ideal choice for applications that require high power and efficiency, while also offering a small form factor and rugged construction for reliable operation in demanding environments
The device features a rugged and reliable design, with its components constructed from high-quality materials that are capable of withstanding harsh operating conditions. It also has a compact footprint, with its small size and surface-mount package allowing it to be easily integrated into a variety of different circuit designs. Overall, the Vishay SUM70040E-GE3 is an ideal choice for applications that require high power and efficiency, while also offering a small form factor and rugged construction for reliable operation in demanding environments
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 50 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 375W (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| Supplier Device Package | TO-263 (D²Pak) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
