onsemi DTC144EET1G

onsemi - DTC144EET1G

Stock Code
017709

Manufacturer / Brand

Part Number
DTC144EET1G

Unit Price
$0.1110

Factory Lead-Time
21 Weeks

Short Description
NPN Digital Transistor, 50V, 100mA, Surface mount, SOT-23 package

In Stock: 9063


Qty Unit Price Total Price Discount
1 $0.1110 $0.1110
10 $0.1010 $1.0100 -9.01%
100 $0.0552 $5.5200 -50.27%
500 $0.0339 $16.9500 -69.46%
1000 $0.0231 $23.1000 -79.19%
Description
The ON Semiconductor DTC144EET1G is a high-performance bipolar transistor designed for use in a wide range of applications. This device features a small SOT-23 package, making it ideal for use in space-constrained applications. The DTC144EET1G has a hFE range from 120 to 360, making it well-suited for use in low- to medium-power amplifiers, switching regulators, and other applications that require high gain and low noise performance. In addition, the device features a 50V collector-emitter voltage rating, high current gain, and low saturation voltage. It operates over a wide temperature range from -55°C to 150°C, making it ideal for use in harsh environments.

The DTC144EET1G also has a low collector-emitter saturation voltage, making it well-suited for use in low-voltage applications. This device is designed to meet RoHS compliance requirements and is also lead-free. Overall, the ON Semiconductor DTC144EET1G is a versatile and effective transistor that is well-suited for a variety of applications, from low-power amplifiers to switching regulators and beyond. Its small size and low saturation voltage make it an excellent choice for applications where space is at a premium and power efficiency is critical
Product Attributes
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Cut Tape (CT)
Power - Max 200 mW
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Supplier Device Package SC-75, SOT-416
Transistor Type NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V

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