onsemi MMBTA06LT1G
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code 017890
017890
Manufacturer / Brand
onsemi Part Number MMBTA06LT1G
MMBTA06LT1G
Unit Price $0.1170
$0.1170
Factory Lead-Time 47 Weeks
47 Weeks
Short Description NPN small signal transistor, low voltage, high current capability
NPN small signal transistor, low voltage, high current capability
Datasheet
In Stock: 413
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.1170 | $0.1170 | |
| 10 | $0.1070 | $1.0700 | -8.55% |
| 100 | $0.0581 | $5.8100 | -50.34% |
| 500 | $0.0357 | $17.8500 | -69.49% |
| 1000 | $0.0244 | $24.4000 | -79.15% |
Description
The ON Semiconductor MMBTA06LT1G is a PNP bipolar junction transistor (BJT) that is housed in a small, surface mount SOT-23 package. It can handle a collector-emitter voltage (VCEO) of up to -80V and can deliver a maximum continuous collector current (IC) of -500mA. The transistor features a low collector-emitter saturation voltage (VCEsat) of -0.5V, which makes it an excellent candidate for low voltage applications where minimizing power dissipation is crucial.
The MMBTA06LT1G also has a high DC current gain (hFE) of up to 250, which provides high amplification and signal processing capabilities. The transistor is designed to operate over a wide temperature range of -55°C to 150°C, making it suitable for use in harsh industrial and automotive environments. It is RoHS compliant and is well suited for use in general purpose switching and amplification applications, such as voltage regulators, battery charge controllers, LED drivers, and motor control circuits
The MMBTA06LT1G also has a high DC current gain (hFE) of up to 250, which provides high amplification and signal processing capabilities. The transistor is designed to operate over a wide temperature range of -55°C to 150°C, making it suitable for use in harsh industrial and automotive environments. It is RoHS compliant and is well suited for use in general purpose switching and amplification applications, such as voltage regulators, battery charge controllers, LED drivers, and motor control circuits
Product Attributes
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power - Max | 225 mW |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
