IXYS IXTH200N10T
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
022322
022322
Manufacturer / Brand
IXYS
Part Number
IXTH200N10T
IXTH200N10T
Unit Price
$6.2600
$6.2600
Factory Lead-Time
64 Weeks
64 Weeks
Short Description
Power MOSFET, 200A/100V, TO-247 package
Power MOSFET, 200A/100V, TO-247 package
Datasheet
In Stock: 2930
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $6.2600 | $6.2600 | |
| 10 | $5.6600 | $56.6000 | -9.58% |
| 30 | $5.5200 | $165.6000 | -11.82% |
| 100 | $4.5800 | $458.0000 | -26.84% |
| 500 | $3.9900 | $1,995.0000 | -36.26% |
| 1000 | $3.4700 | $3,470.0000 | -44.57% |
Description
The IXYS IXTH200N10T is a high-performance power MOSFET transistor designed for use in a variety of applications. With a maximum drain-source voltage of 100V and a continuous drain current of 200A, this MOSFET is capable of handling high-power circuits and can be used in motor control, power supplies, and other high-current applications.
The IXTH200N10T features a low on-resistance of 0.01 ohms, which minimizes power losses and maximizes efficiency. Additionally, the MOSFET has a fast switching speed and low gate charge, allowing for quick switching times and high switching frequencies. The IXTH200N10T is housed in a TO-247 package with a maximum junction temperature of 175°C, ensuring reliable performance even in high-temperature environments. Overall, the IXYS IXTH200N10T is a reliable, high-performance MOSFET for demanding power applications
The IXTH200N10T features a low on-resistance of 0.01 ohms, which minimizes power losses and maximizes efficiency. Additionally, the MOSFET has a fast switching speed and low gate charge, allowing for quick switching times and high switching frequencies. The IXTH200N10T is housed in a TO-247 package with a maximum junction temperature of 175°C, ensuring reliable performance even in high-temperature environments. Overall, the IXYS IXTH200N10T is a reliable, high-performance MOSFET for demanding power applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Power Dissipation (Max) | 550W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V |
| Supplier Device Package | TO-247 (IXTH) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
