IXYS IXTK170P10P

IXYS IXTK170P10P is a power MOSFET transistor with a voltage rating of 1000V and a current rating of 170A. It features a low on-resistance of 10 mOhm and a high-speed switching capability. It is designed for use in motor control, UPS systems, and welding equipment. The MOSFET has a TO-264 package and is insulated with silicone rubber to provide high thermal conductivity and electrical insulation. This MOSFET is capable of handling high power loads due to its low on-resistance and high current rating, making it an ideal choice for applications that require high-speed switching and efficient power handling.

The IXYS IXTK170P10P MOSFET features a gate voltage rating of ±30V, making it compatible with most gate drivers. Its low on-resistance helps to reduce power losses and increase efficiency in high power applications. The MOSFET also has a high blocking voltage capability, which enables it to handle high voltage loads. With its rugged design and high reliability, the IXYS IXTK170P10P is an excellent choice for a wide range of high power applications. Whether you need to switch high power loads in welding equipment or control the speed of a motor, this MOSFET provides excellent performance and reliability

Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	12600 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-264-3, TO-264AA
Packaging	Tube
Power Dissipation (Max)	890W (Tc)
Rds On (Max) @ Id, Vgs	12mOhm @ 500mA, 10V
Supplier Device Package	TO-264 (IXTK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA