Microsemi APT100S20BG
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See Product Specifications.
See Product Specifications.
Stock Code
022409
022409
Manufacturer / Brand
Microsemi
Part Number
APT100S20BG
APT100S20BG
Categories
Unit Price
$3.7200
$3.7200
Factory Lead-Time
52 Weeks
52 Weeks
Short Description
SiC Schottky rectifier; 100A, 200V
SiC Schottky rectifier; 100A, 200V
Datasheet
In Stock: 297
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $3.7200 | $3.7200 | |
| 100 | $3.6300 | $363.0000 | -2.42% |
Description
The Microsemi APT100S20BG is a high power Silicon Carbide MOSFET transistor designed for high frequency power converters. This device features a low on-resistance, low gate charge, and fast switching speeds, making it ideal for use in high efficiency power electronics applications. The APT100S20BG is rated for a maximum voltage of 1200 VDC and a current of 100 A, providing ample power for a wide range of applications.
The APT100S20BG is constructed using Silicon Carbide technology, which provides superior performance compared to traditional power MOSFETs. This device is designed for use in high frequency power converters, where its low on-resistance and high current rating enable it to efficiently switch high power loads. Its fast switching speeds ensure that power is delivered to the load quickly, reducing the risk of system failure due to voltage overshoot. Overall, the APT100S20BG is an excellent choice for designers who need a high performance MOSFET transistor for demanding power electronics applications
The APT100S20BG is constructed using Silicon Carbide technology, which provides superior performance compared to traditional power MOSFETs. This device is designed for use in high frequency power converters, where its low on-resistance and high current rating enable it to efficiently switch high power loads. Its fast switching speeds ensure that power is delivered to the load quickly, reducing the risk of system failure due to voltage overshoot. Overall, the APT100S20BG is an excellent choice for designers who need a high performance MOSFET transistor for demanding power electronics applications
Product Attributes
| Current - Average Rectified (Io) | 120A |
| Current - Reverse Leakage @ Vr | 2 mA @ 200 V |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package / Case | TO-247-2 |
| Packaging | Tube |
| Reverse Recovery Time (trr) | 70 ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | TO-247 [B] |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 100 A |
