Microsemi APT100S20BG

The Microsemi APT100S20BG is a high power Silicon Carbide MOSFET transistor designed for high frequency power converters. This device features a low on-resistance, low gate charge, and fast switching speeds, making it ideal for use in high efficiency power electronics applications. The APT100S20BG is rated for a maximum voltage of 1200 VDC and a current of 100 A, providing ample power for a wide range of applications.

The APT100S20BG is constructed using Silicon Carbide technology, which provides superior performance compared to traditional power MOSFETs. This device is designed for use in high frequency power converters, where its low on-resistance and high current rating enable it to efficiently switch high power loads. Its fast switching speeds ensure that power is delivered to the load quickly, reducing the risk of system failure due to voltage overshoot. Overall, the APT100S20BG is an excellent choice for designers who need a high performance MOSFET transistor for demanding power electronics applications

Current - Average Rectified (Io)	120A
Current - Reverse Leakage @ Vr	2 mA @ 200 V
Mounting Type	Through Hole
Operating Temperature - Junction	-55°C ~ 150°C
Package / Case	TO-247-2
Packaging	Tube
Reverse Recovery Time (trr)	70 ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package	TO-247 [B]
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV @ 100 A