Vishay SQD19P06-60L_GE3
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See Product Specifications.
See Product Specifications.
Stock Code
022527
022527
Manufacturer / Brand
Vishay
Part Number
SQD19P06-60L_GE3
SQD19P06-60L_GE3
Unit Price
$1.0400
$1.0400
Factory Lead-Time
75 Weeks
75 Weeks
Short Description
N-channel MOSFET transistor for switching applications - Vishay SQD19P06-60L_GE3
N-channel MOSFET transistor for switching applications - Vishay SQD19P06-60L_GE3
Datasheet
In Stock: 980
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.0400 | $1.0400 | |
| 10 | $0.9300 | $9.3000 | -10.58% |
| 100 | $0.7250 | $72.5000 | -30.29% |
| 500 | $0.5990 | $299.5000 | -42.4% |
| 1000 | $0.4730 | $473.0000 | -54.52% |
Description
The Vishay SQD19P06-60L_GE3 is a P-channel power MOSFET transistor designed specifically for high efficiency, low voltage applications. It is a through-hole package with a drain-source voltage rating of 60V and a continuous drain current rating of 19A. The device features low on-resistance and fast switching speeds, making it ideal for use in applications such as DC-DC converters, power supplies, motor control, and other high-power switching circuits.
The SQD19P06-60L_GE3 is constructed with a rugged, aluminum substrate that is designed to provide high thermal conductivity and improved thermal management. The gate drive voltage is typically within the range of ±20V, allowing for compatibility with wide range of microcontrollers and digital signal processors. Moreover, the device is RoHS compliant, making it environmentally-friendly and safe for use in a range of electronic applications. With its low on-resistance, fast switching speeds, and high thermal conductivity, the Vishay SQD19P06-60L_GE3 is an excellent choice for high efficiency, low voltage applications that require high power switching capabilities
The SQD19P06-60L_GE3 is constructed with a rugged, aluminum substrate that is designed to provide high thermal conductivity and improved thermal management. The gate drive voltage is typically within the range of ±20V, allowing for compatibility with wide range of microcontrollers and digital signal processors. Moreover, the device is RoHS compliant, making it environmentally-friendly and safe for use in a range of electronic applications. With its low on-resistance, fast switching speeds, and high thermal conductivity, the Vishay SQD19P06-60L_GE3 is an excellent choice for high efficiency, low voltage applications that require high power switching capabilities
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 46W (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 19A, 10V |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
