Diodes DMN2300UFB4-7B

Diodes - DMN2300UFB4-7B

Stock Code
023504

Manufacturer / Brand

Part Number
DMN2300UFB4-7B

Unit Price
$0.2860

Factory Lead-Time
21 Weeks

Short Description
High-current P-channel MOSFET with fast switching speed and low on-resistance

In Stock: 147997


Qty Unit Price Total Price Discount
1 $0.2860 $0.2860
10 $0.2140 $2.1400 -25.17%
100 $0.1220 $12.2000 -57.34%
500 $0.0810 $40.5000 -71.68%
1000 $0.0579 $57.9000 -79.76%
2000 $0.0538 $107.6000 -81.19%
2500 $0.0533 $133.2500 -81.36%
5000 $0.0486 $243.0000 -83.01%
10000 $0.0429 $429.0000 -85%
Description
The DMN2300UFB4-7B diode is a small signal MOSFET device designed for low voltage applications. This diode is made using advanced manufacturing techniques that ensure it delivers high performance and reliability. The DMN2300UFB4-7B is a robust device that can withstand high currents and voltages, which makes it ideal for use in a variety of applications, including switching circuits, power supplies, and motor controls. With a low on-resistance and low gate charge, this diode offers improved power management compared to other diodes in its class. Additionally, its compact and lightweight design makes it easy to integrate into a wide range of electronic devices and systems.

The DMN2300UFB4-7B diode features a low threshold voltage, which makes it highly efficient at switching a wide range of signals. It also has a fast switching speed, which allows it to handle high frequencies with ease. This diode offers excellent thermal performance, thanks to its low thermal resistance, which helps to minimize heat dissipation and thus extend the device's life. Overall, the DMN2300UFB4-7B is a versatile and reliable diode that is ideal for use in a range of electronic applications. Whether you're working on a high-performance motor control system or a low-power switching circuit, this diode will deliver outstanding results
Product Attributes
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drain to Source Voltage (Vdss) 20 V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 64.3 pF @ 25 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 3-XFDFN
Packaging Cut Tape (CT)
Power Dissipation (Max) 500mW (Ta)
Rds On (Max) @ Id, Vgs 175mOhm @ 300mA, 4.5V
Supplier Device Package X2-DFN1006-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±8V
Vgs(th) (Max) @ Id 950mV @ 250µA

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