onsemi FDS9926A

The ON Semiconductor FDS9926A is a N-channel power MOSFET transistor with a drain-source voltage of 30V and a continuous drain current of 8.3A. It is commonly used in various switching applications due to its low on-resistance of 19mΩ at 10V gate voltage, making it a highly efficient switch. The transistor is designed to provide high-speed switching performance with a controlled turn-on and turn-off time of 17ns and 70ns, respectively, which allows it to operate at a high frequency. It also features a low gate threshold voltage of 1.5V, making it easy to use with various logic level drivers.

The FDS9926A is designed with an advanced trench MOSFET structure, which allows for a high packing density and low on-state resistance. The transistor’s low gate charge of 8.5nC helps minimize switching losses and allows for fast turn-on and turn-off times, making it particularly suitable for use in power conversion applications. The transistor has a maximum junction temperature of 175°C and comes in a compact SO-8 package that makes it easy to mount on circuit boards. The ON Semiconductor FDS9926A is a reliable and high-performance N-channel power MOSFET that offers an excellent combination of low on-resistance, fast switching speed, and low gate threshold voltage

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6.5A
Drain to Source Voltage (Vdss)	20V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 10V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Packaging	Cut Tape (CT)
Power - Max	900mW
Rds On (Max) @ Id, Vgs	30mOhm @ 6.5A, 4.5V
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5V @ 250µA