STMicroelectronics STPSC12C065DY

The STPSC12C065DY is a silicon carbide diode from STMicroelectronics that has a forward voltage rating of 10V, a repetitive peak reverse voltage of 650V, and a maximum reverse current of 15uA. Its maximum operating temperature is +175°C and its power dissipation is around 50W. This diode has an average forward current rating of 12A and a surge current rating of 100A. It is constructed using advanced Silicon Carbide Schottky technology that allows for fast switching with low leakage current and low forward voltage drop. It is designed with a large and rugged junction barrier that enhances its durability and ensures that it delivers reliable performance under harsh operating conditions. The STPSC12C065DY is ideal for use in high-frequency inverter, power supply and solar applications.

The STMicroelectronics STPSC12C065DY diode has a compact, optimized design that makes it an ideal solution for many different applications. It has excellent stability characteristics and low parasitic capacitances, which make it ideal for use in high-frequency circuits. Its high breakdown voltage and excellent forward voltage drop make it ideal for use in power supply and inverter applications. Additionally, its high surge current capability and rugged construction allow it to withstand high voltage spikes and surges that may occur during power supply operation. The STPSC12C065DY is a reliable and cost-effective solution for any application that you may have that requires fast switching and low leakage current

Capacitance @ Vr, F	530pF @ 0V, 1MHz
Current - Average Rectified (Io)	12A
Current - Reverse Leakage @ Vr	120 µA @ 650 V
Mounting Type	Through Hole
Operating Temperature - Junction	-40°C ~ 175°C
Package / Case	TO-220-2
Packaging	Tube
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max) @ If	1.75 V @ 12 A