Infineon IPT007N06NATMA1
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See Product Specifications.
See Product Specifications.
Stock Code
028312
028312
Manufacturer / Brand
Infineon
Part Number
IPT007N06NATMA1
IPT007N06NATMA1
Unit Price
$4.0600
$4.0600
Factory Lead-Time
40 Weeks
40 Weeks
Short Description
N-channel MOSFET power transistor with 60V and 75A maximum ratings
N-channel MOSFET power transistor with 60V and 75A maximum ratings
Datasheet
In Stock: 4227
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $4.0600 | $4.0600 | |
| 10 | $3.6700 | $36.7000 | -9.61% |
| 100 | $3.0400 | $304.0000 | -25.12% |
| 500 | $2.6400 | $1,320.0000 | -34.98% |
| 1000 | $2.3000 | $2,300.0000 | -43.35% |
Description
Infineon IPT007N06NATMA1 is a high-performance power MOSFET designed to be used in industrial and automotive applications. It features a low on-state resistance and fast switching speed, making it ideal for use in applications that require high power efficiency and switching performance.
This MOSFET is built using advanced silicon technology, which allows it to operate at high voltages and temperatures without compromising performance or reliability. The device has a maximum drain-source voltage of 60V and a maximum continuous drain current of 75A, making it suitable for a wide range of high-power applications. Additionally, the device features low gate charge and gate-to-source voltage, helping to further reduce power losses and increase overall efficiency. Overall, the Infineon IPT007N06NATMA1 is a high-performance MOSFET that offers excellent power efficiency and switching performance, making it an ideal choice for use in high-power industrial and automotive applications
This MOSFET is built using advanced silicon technology, which allows it to operate at high voltages and temperatures without compromising performance or reliability. The device has a maximum drain-source voltage of 60V and a maximum continuous drain current of 75A, making it suitable for a wide range of high-power applications. Additionally, the device features low gate charge and gate-to-source voltage, helping to further reduce power losses and increase overall efficiency. Overall, the Infineon IPT007N06NATMA1 is a high-performance MOSFET that offers excellent power efficiency and switching performance, making it an ideal choice for use in high-power industrial and automotive applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 287 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | 8-PowerSFN |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 375W (Tc) |
| Rds On (Max) @ Id, Vgs | 0.75mOhm @ 150A, 10V |
| Supplier Device Package | PG-HSOF-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.3V @ 280µA |
