Micron MT25QU01GBBB8E12-0AAT
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See Product Specifications.
See Product Specifications.
Stock Code
028360
028360
Manufacturer / Brand
Micron
Part Number
MT25QU01GBBB8E12-0AAT
MT25QU01GBBB8E12-0AAT
Categories
Unit Price
$14.5500
$14.5500
Factory Lead-Time
11 Weeks
11 Weeks
Short Description
1Gb SPI NOR Flash Memory Chip by Micron
1Gb SPI NOR Flash Memory Chip by Micron
In Stock: 11713
Qty | Unit Price | Total Price | Discount |
---|---|---|---|
1 | $14.5500 | $14.5500 | |
10 | $13.5500 | $135.5000 | -6.87% |
25 | $13.4000 | $335.0000 | -7.9% |
50 | $13.0700 | $653.5000 | -10.17% |
100 | $11.4800 | $1,148.0000 | -21.1% |
250 | $11.0900 | $2,772.5000 | -23.78% |
500 | $10.7900 | $5,395.0000 | -25.84% |
Description
Micron MT25QU01GBBB8E12-0AAT is a serial NOR flash memory that offers an ultra-low-power operation. It offers a 1 Gbit storage density with a maximum clock frequency of 133 MHz. This device comes in an 8-pin package and can be used in various applications such as IoT, automotive, industrial, networking, and storage.
The operating voltage of Micron MT25QU01GBBB8E12-0AAT range from 1.7 to 1.95V. It features a sector erase architecture with flexible erase granularity. The device uses a Quad Peripheral Interface (QPI) for communication, which allows for a much faster data transfer rate. Additionally, this flash memory supports multiple read commands such as Read Data, Fast Read, Dual Output Fast Read, Dual I/O FastRead, and Quad Output Fast Read. This provides versatility and allows for an efficient system design.
The advanced security features on Micron MT25QU01GBBB8E12-0AAT include a 64-bit unique ID and an enhanced memory protection scheme. The memory protection scheme ensures that only authorized entities can access or modify the data stored on the device. Furthermore, this flash memory has a high endurance of up to 100,000 program/erase cycles, which increases the device's lifespan. Micron MT25QU01GBBB8E12-0AAT is a reliable and efficient flash memory that provides high performance, security, and functionality
The operating voltage of Micron MT25QU01GBBB8E12-0AAT range from 1.7 to 1.95V. It features a sector erase architecture with flexible erase granularity. The device uses a Quad Peripheral Interface (QPI) for communication, which allows for a much faster data transfer rate. Additionally, this flash memory supports multiple read commands such as Read Data, Fast Read, Dual Output Fast Read, Dual I/O FastRead, and Quad Output Fast Read. This provides versatility and allows for an efficient system design.
The advanced security features on Micron MT25QU01GBBB8E12-0AAT include a 64-bit unique ID and an enhanced memory protection scheme. The memory protection scheme ensures that only authorized entities can access or modify the data stored on the device. Furthermore, this flash memory has a high endurance of up to 100,000 program/erase cycles, which increases the device's lifespan. Micron MT25QU01GBBB8E12-0AAT is a reliable and efficient flash memory that provides high performance, security, and functionality
Product Attributes
Clock Frequency | 133 MHz |
Digi-Key Programmable | Not Verified |
Memory Format | FLASH |
Memory Interface | SPI |
Memory Organization | 128M x 8 |
Memory Size | 1Gbit |
Memory Type | Non-Volatile |
Mounting Type | Surface Mount |
Operating Temperature | -40°C ~ 105°C (TA) |
Package / Case | 24-TBGA |
Packaging | Bulk |
Supplier Device Package | 24-T-PBGA (6x8) |
Technology | FLASH - NOR |
Voltage - Supply | 1.7V ~ 2V |
Write Cycle Time - Word, Page | 8ms, 2.8ms |