Nexperia BUK9Y59-60E,115
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See Product Specifications.
See Product Specifications.
Stock Code
030155
030155
Manufacturer / Brand
Nexperia
Part Number
BUK9Y59-60E,115
BUK9Y59-60E,115
Unit Price
$0.5130
$0.5130
Factory Lead-Time
58 Weeks
58 Weeks
Short Description
60V N-channel Power MOSFET in LFPAK56E package
60V N-channel Power MOSFET in LFPAK56E package
Datasheet
In Stock: 729
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.5130 | $0.5130 | |
| 10 | $0.4500 | $4.5000 | -12.28% |
| 100 | $0.3450 | $34.5000 | -32.75% |
| 500 | $0.2730 | $136.5000 | -46.78% |
Description
The Nexperia BUK9Y59-60E,115 is a highly efficient MOSFET transistor designed specifically for use in power management applications. With a low on-resistance of just 5 milliohm, this device is capable of handling high power loads while minimizing power losses and heat generation. It features a compact 5x6mm Power-SO8 package, making it ideal for use in space-constrained applications.
This MOSFET transistor is highly reliable thanks to a robust design that includes a rugged gate oxide layer and high-temperature performance up to 150°C. It also offers a wide range of protection features, including thermal protection and overvoltage protection, which make it ideal for use in industrial, automotive, and consumer electronic applications. With low switching losses and high current capability, the Nexperia BUK9Y59-60E,115 is a versatile and reliable solution for power management applications
This MOSFET transistor is highly reliable thanks to a robust design that includes a rugged gate oxide layer and high-temperature performance up to 150°C. It also offers a wide range of protection features, including thermal protection and overvoltage protection, which make it ideal for use in industrial, automotive, and consumer electronic applications. With low switching losses and high current capability, the Nexperia BUK9Y59-60E,115 is a versatile and reliable solution for power management applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 16.7A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 715 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | SC-100, SOT-669 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 37W (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 10V |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
