Infineon IRF530N
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
030200
030200
Manufacturer / Brand
Infineon
Part Number
IRF530N
IRF530N
Unit Price
$0.2567
$0.2567
Factory Lead-Time
8 Weeks
8 Weeks
Short Description
N-channel power MOSFET with 17A capacity and 100V voltage rating
N-channel power MOSFET with 17A capacity and 100V voltage rating
Datasheet
In Stock: 13234
Qty | Unit Price | Total Price | Discount |
---|---|---|---|
1 | $0.2567 | $0.2567 |
Description
Infineon IRF530N is a power MOSFET transistor that is designed to handle high voltage and high current loads. It is built using advanced N-channel technology, making it suitable for a wide range of applications such as motor control, power regulation, and switching circuits. With a maximum current capacity of 14 amps and a maximum voltage rating of 100 volts, this MOSFET can handle a significant amount of power without overheating.
The Infineon IRF530N features a low on-resistance of only 0.16 ohms, which means that it offers a high level of efficiency and reduces power losses in switching applications. It also has a high switching speed, which makes it ideal for use in applications that require rapid switching cycles. Furthermore, this MOSFET transistor has a low gate charge, which helps to reduce the amount of power required to drive it, thereby increasing system efficiency. Overall, the Infineon IRF530N is a reliable and efficient power transistor that is ideal for a wide range of power applications
The Infineon IRF530N features a low on-resistance of only 0.16 ohms, which means that it offers a high level of efficiency and reduces power losses in switching applications. It also has a high switching speed, which makes it ideal for use in applications that require rapid switching cycles. Furthermore, this MOSFET transistor has a low gate charge, which helps to reduce the amount of power required to drive it, thereby increasing system efficiency. Overall, the Infineon IRF530N is a reliable and efficient power transistor that is ideal for a wide range of power applications