onsemi BSS138
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
031115
031115
Manufacturer / Brand
onsemi
Part Number
BSS138
BSS138
Unit Price
$0.2140
$0.2140
Factory Lead-Time
85 Weeks
85 Weeks
Short Description
N-channel MOSFET for low voltage applications
N-channel MOSFET for low voltage applications
Datasheet
In Stock: 149821
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.2140 | $0.2140 | |
| 10 | $0.1770 | $1.7700 | -17.29% |
| 100 | $0.0940 | $9.4000 | -56.07% |
| 500 | $0.0618 | $30.9000 | -71.12% |
| 1000 | $0.0423 | $42.3000 | -80.23% |
| 2500 | $0.0338 | $84.5000 | -84.21% |
| 5000 | $0.0293 | $146.5000 | -86.31% |
| 10000 | $0.0247 | $247.0000 | -88.46% |
Description
The ON Semiconductor BSS138 is a logic level N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed specifically for low voltage applications. It features a maximum drain-source voltage rating of 50 volts and a continuous drain current rating of 220 mA. The BSS138 has a gate threshold voltage of 1.5 V to 3.5 V, making it suitable for use with low voltage logic level circuits.
The BSS138 is designed with a low on-state resistance, which ensures low power loss and high efficiency. It is housed in a SOT-23 package, which makes it easy to install and use in a wide range of applications. The BSS138 is commonly used to switch and control DC motors, LEDs, and other low voltage devices. Its small size, high switching speed, and low on-state resistance make it ideal for use in portable devices, such as smartphones, tablets, and power banks
The BSS138 is designed with a low on-state resistance, which ensures low power loss and high efficiency. It is housed in a SOT-23 package, which makes it easy to install and use in a wide range of applications. The BSS138 is commonly used to switch and control DC motors, LEDs, and other low voltage devices. Its small size, high switching speed, and low on-state resistance make it ideal for use in portable devices, such as smartphones, tablets, and power banks
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 220mA (Ta) |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
