onsemi FDMS8320L
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
032749
032749
Manufacturer / Brand
onsemi
Part Number
FDMS8320L
FDMS8320L
Unit Price
$2.5600
$2.5600
Factory Lead-Time
60 Weeks
60 Weeks
Short Description
20V, 30A N-Channel PowerTrench MOSFET with low on-resistance and FDMesh technology
20V, 30A N-Channel PowerTrench MOSFET with low on-resistance and FDMesh technology
Datasheet
In Stock: 10136
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $2.5600 | $2.5600 | |
| 10 | $2.3100 | $23.1000 | -9.77% |
| 100 | $1.8900 | $189.0000 | -26.17% |
| 500 | $1.6100 | $805.0000 | -37.11% |
| 1000 | $1.3600 | $1,360.0000 | -46.88% |
| 3000 | $1.1600 | $3,480.0000 | -54.69% |
| 6000 | $1.1400 | $6,840.0000 | -55.47% |
Description
The ON Semiconductor FDMS8320L is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device that is designed for use in low voltage, high density power management applications. This device features a low on-resistance of 5.7 milliohms and a maximum drain current of 29 amps. It also has a low gate charge of 3.8 nC, making it ideal for applications that require fast switching times.
The FDMS8320L is constructed using advanced MOSFET technology, which provides high performance and reliability. It features a low profile and small footprint, making it suitable for use in space-constrained applications. The device is housed in a Power33 package, which is RoHS compliant and can withstand high temperatures. The FDMS8320L is suitable for a wide range of power management applications, including computing, telecommunications, and automotive applications. It is an ideal choice for designers looking for a high-performance MOSFET that can deliver high power density and efficient performance in a small form factor
The FDMS8320L is constructed using advanced MOSFET technology, which provides high performance and reliability. It features a low profile and small footprint, making it suitable for use in space-constrained applications. The device is housed in a Power33 package, which is RoHS compliant and can withstand high temperatures. The FDMS8320L is suitable for a wide range of power management applications, including computing, telecommunications, and automotive applications. It is an ideal choice for designers looking for a high-performance MOSFET that can deliver high power density and efficient performance in a small form factor
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11110 pF @ 20 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 32A, 10V |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
