Infineon IAUS300N10S5N015TATMA1
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
032905
032905
Manufacturer / Brand
Infineon
Part Number
IAUS300N10S5N015TATMA1
IAUS300N10S5N015TATMA1
Unit Price
$5.9000
$5.9000
Factory Lead-Time
26 Weeks
26 Weeks
Short Description
Power MOSFET 100V 300A N-Ch FS5 series 015N10S5N Trenchstop 5 IGBT5-enh. ultra-low Qg
Power MOSFET 100V 300A N-Ch FS5 series 015N10S5N Trenchstop 5 IGBT5-enh. ultra-low Qg
In Stock: 2450
Qty | Unit Price | Total Price | Discount |
---|---|---|---|
1 | $5.9000 | $5.9000 | |
10 | $5.3300 | $53.3000 | -9.66% |
100 | $4.4100 | $441.0000 | -25.25% |
500 | $3.8400 | $1,920.0000 | -34.92% |
Description
The Infineon IAUS300N10S5N015TATMA1 is a power MOSFET device designed for use in various high-performance switching applications. It has a maximum voltage rating of 100V, with a current rating of 300A, making it suitable for use in various industrial and automotive control systems.
This MOSFET device has a low on-resistance, thereby minimizing power losses and improving the overall efficiency of the system. It features a robust design that enhances reliability and durability, making it an ideal choice for power switching applications in harsh environments. The device also features an advanced gate driver design that enables high-speed switching and prevents damage to the device due to overcurrent or thermal overload. Overall, the Infineon IAUS300N10S5N015TATMA1 is a reliable and high-performance MOSFET device designed for use in various applications that require high power density and efficiency
This MOSFET device has a low on-resistance, thereby minimizing power losses and improving the overall efficiency of the system. It features a robust design that enhances reliability and durability, making it an ideal choice for power switching applications in harsh environments. The device also features an advanced gate driver design that enables high-speed switching and prevents damage to the device due to overcurrent or thermal overload. Overall, the Infineon IAUS300N10S5N015TATMA1 is a reliable and high-performance MOSFET device designed for use in various applications that require high power density and efficiency
Product Attributes
Current - Continuous Drain (Id) @ 25°C | 300A (Tj) |
Drain to Source Voltage (Vdss) | 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 216 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 16011 pF @ 50 V |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package / Case | 16-PowerSOP Module |
Packaging | Cut Tape (CT) |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 100A, 10V |
Supplier Device Package | PG-HDSOP-16-2 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 3.8V @ 275µA |