Infineon IAUS300N10S5N015TATMA1

Infineon - IAUS300N10S5N015TATMA1

Stock Code
032905

Manufacturer / Brand

Part Number
IAUS300N10S5N015TATMA1

Unit Price
$5.9000

Factory Lead-Time
26 Weeks

Short Description
Power MOSFET 100V 300A N-Ch FS5 series 015N10S5N Trenchstop 5 IGBT5-enh. ultra-low Qg

In Stock: 2450


Qty Unit Price Total Price Discount
1 $5.9000 $5.9000
10 $5.3300 $53.3000 -9.66%
100 $4.4100 $441.0000 -25.25%
500 $3.8400 $1,920.0000 -34.92%
Description
The Infineon IAUS300N10S5N015TATMA1 is a power MOSFET device designed for use in various high-performance switching applications. It has a maximum voltage rating of 100V, with a current rating of 300A, making it suitable for use in various industrial and automotive control systems.

This MOSFET device has a low on-resistance, thereby minimizing power losses and improving the overall efficiency of the system. It features a robust design that enhances reliability and durability, making it an ideal choice for power switching applications in harsh environments. The device also features an advanced gate driver design that enables high-speed switching and prevents damage to the device due to overcurrent or thermal overload. Overall, the Infineon IAUS300N10S5N015TATMA1 is a reliable and high-performance MOSFET device designed for use in various applications that require high power density and efficiency
Product Attributes
Current - Continuous Drain (Id) @ 25°C 300A (Tj)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 16011 pF @ 50 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case 16-PowerSOP Module
Packaging Cut Tape (CT)
Power Dissipation (Max) 375W (Tc)
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Supplier Device Package PG-HDSOP-16-2
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3.8V @ 275µA

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