Fairchild FDMS86263P-23507X

Fairchild - FDMS86263P-23507X

Stock Code
033146

Manufacturer / Brand

Part Number
FDMS86263P-23507X

Unit Price
$1.4600

Factory Lead-Time
23 Weeks

Short Description
Power MOSFET with a maximum voltage rating of 25V and a drain current of 6.5A

In Stock: 1392


Qty Unit Price Total Price Discount
1 $1.4600 $1.4600
10 $1.3200 $13.2000 -9.59%
25 $1.2500 $31.2500 -14.38%
100 $1.0600 $106.0000 -27.4%
500 $0.8710 $435.5000 -40.34%
1000 $0.7280 $728.0000 -50.14%
3000 $0.7220 $2,166.0000 -50.55%
Description
The FAIRCHILD FDMS86263P-23507X is a 30V N-channel PowerTrench MOSFET designed for use in a range of power conversion applications. This MOSFET has a low on resistance of 2.2mOhms, making it an ideal choice for high current applications where efficiency is a key consideration. The device is packaged in a compact, 6x2mm MLP package, making it suitable for use in space-constrained applications. This MOSFET also features a low gate charge and low gate capacitance, which results in fast switching speeds and reduces the likelihood of unwanted oscillations in the circuit.

The device's performance is further optimized with its temperature rise of just 3°C/W. This low thermal resistance means that the device can operate at higher currents without overheating, resulting in increased reliability and longer lifespan. Other notable features include a 60A continuous drain current and a 150A pulsed drain current. Overall, the FAIRCHILD FDMS86263P-23507X is an efficient and reliable MOSFET that is an excellent choice for high current applications
Product Attributes
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss) 150 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3905 pF @ 75 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Power Dissipation (Max) 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs 53mOhm @ 4.4A, 10V
Supplier Device Package 8-PQFN (5x6)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±25V
Vgs(th) (Max) @ Id 4V @ 250µA

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