Microchip APT60DQ60BCTG
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See Product Specifications.
See Product Specifications.
Stock Code
036829
036829
Manufacturer / Brand
Microchip
Part Number
APT60DQ60BCTG
APT60DQ60BCTG
Categories
Unit Price
$2.7800
$2.7800
Factory Lead-Time
38 Weeks
38 Weeks
Short Description
Power MOSFET module for high voltage and current applications
Power MOSFET module for high voltage and current applications
Datasheet
In Stock: 406
Qty | Unit Price | Total Price | Discount |
---|---|---|---|
1 | $2.7800 | $2.7800 | |
100 | $2.7000 | $270.0000 | -2.88% |
Description
The Microchip APT60DQ60BCTG is a power MOSFET transistor designed to handle high voltage and current levels. It has a maximum voltage rating of 600V and a continuous drain current rating of 60A, making it suitable for a wide range of power applications. The device is built using a well-established MOSFET process, which ensures excellent performance and reliability. It features a low on-resistance of 26mOhms, which means that it dissipates less power and operates at a lower temperature than other devices with similar specifications. The APT60DQ60BCTG also has a fast switching time and a high di/dt rating, which makes it ideal for use in applications that require a high level of control.
The packaging of the APT60DQ60BCTG is designed to enhance its thermal performance. It features a TO-247 package with a copper base, which provides excellent thermal conductivity. The copper base also ensures that heat is dissipated effectively, reducing the thermal stress on the device. Overall, the APT60DQ60BCTG is a high-performance power MOSFET suitable for a variety of applications, including motor drives, power converters, and other high-current, high-voltage applications. Its impressive performance and excellent thermal characteristics make it an ideal choice for designers looking for a robust power device
The packaging of the APT60DQ60BCTG is designed to enhance its thermal performance. It features a TO-247 package with a copper base, which provides excellent thermal conductivity. The copper base also ensures that heat is dissipated effectively, reducing the thermal stress on the device. Overall, the APT60DQ60BCTG is a high-performance power MOSFET suitable for a variety of applications, including motor drives, power converters, and other high-current, high-voltage applications. Its impressive performance and excellent thermal characteristics make it an ideal choice for designers looking for a robust power device
Product Attributes
Current - Average Rectified (Io) (per Diode) | 60A |
Current - Reverse Leakage @ Vr | 25 µA @ 600 V |
Diode Configuration | 1 Pair Common Cathode |
Mounting Type | Through Hole |
Operating Temperature - Junction | -55°C ~ 175°C |
Package / Case | TO-247-3 |
Packaging | Tube |
Reverse Recovery Time (trr) | 35 ns |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | TO-247 [B] |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 60 A |