Microchip APT60DQ60BCTG

The Microchip APT60DQ60BCTG is a power MOSFET transistor designed to handle high voltage and current levels. It has a maximum voltage rating of 600V and a continuous drain current rating of 60A, making it suitable for a wide range of power applications. The device is built using a well-established MOSFET process, which ensures excellent performance and reliability. It features a low on-resistance of 26mOhms, which means that it dissipates less power and operates at a lower temperature than other devices with similar specifications. The APT60DQ60BCTG also has a fast switching time and a high di/dt rating, which makes it ideal for use in applications that require a high level of control.

The packaging of the APT60DQ60BCTG is designed to enhance its thermal performance. It features a TO-247 package with a copper base, which provides excellent thermal conductivity. The copper base also ensures that heat is dissipated effectively, reducing the thermal stress on the device. Overall, the APT60DQ60BCTG is a high-performance power MOSFET suitable for a variety of applications, including motor drives, power converters, and other high-current, high-voltage applications. Its impressive performance and excellent thermal characteristics make it an ideal choice for designers looking for a robust power device

Current - Average Rectified (Io) (per Diode)	60A
Current - Reverse Leakage @ Vr	25 µA @ 600 V
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	-55°C ~ 175°C
Package / Case	TO-247-3
Packaging	Tube
Reverse Recovery Time (trr)	35 ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package	TO-247 [B]
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max) @ If	2.4 V @ 60 A