Infineon IRF640NPBF
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See Product Specifications.
See Product Specifications.
Stock Code
039232
039232
Manufacturer / Brand
Infineon
Part Number
IRF640NPBF
IRF640NPBF
Unit Price
$0.9690
$0.9690
Factory Lead-Time
12 Weeks
12 Weeks
Short Description
N-channel power MOSFET for high-current applications
N-channel power MOSFET for high-current applications
Datasheet
In Stock: 39490
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.9690 | $0.9690 | |
| 10 | $0.8660 | $8.6600 | -10.63% |
| 100 | $0.6750 | $67.5000 | -30.34% |
| 500 | $0.5580 | $279.0000 | -42.41% |
| 1000 | $0.4400 | $440.0000 | -54.59% |
| 2000 | $0.4110 | $822.0000 | -57.59% |
| 5000 | $0.3900 | $1,950.0000 | -59.75% |
| 10000 | $0.3760 | $3,760.0000 | -61.2% |
Description
The IRIRF640NPBF is a high-performance power MOSFET designed for use in a variety of industrial, automotive, and general purpose applications. It features a 200V breakdown voltage and a maximum drain current of 18A, making it well suited for high power applications. The MOSFET is designed to offer a low on-resistance and low gate charge, resulting in low conduction and switching losses.
The package design of the IRIRF640NPBF is TO-220AB, which is widely used in various applications. The device is made with a trench technology that offers high cell density and uniformity, resulting in lower gate resistance. It is also designed with a double metal layer, which improves the power handling capability of the device. Furthermore, the MOSFET features a temperature coefficient that optimizes the device for operation in harsh environments while maintaining its performance. Overall, the IRIRF640NPBF is a reliable and robust component that offers excellent performance in high power applications
The package design of the IRIRF640NPBF is TO-220AB, which is widely used in various applications. The device is made with a trench technology that offers high cell density and uniformity, resulting in lower gate resistance. It is also designed with a double metal layer, which improves the power handling capability of the device. Furthermore, the MOSFET features a temperature coefficient that optimizes the device for operation in harsh environments while maintaining its performance. Overall, the IRIRF640NPBF is a reliable and robust component that offers excellent performance in high power applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Not For New Designs |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
