Infineon IRF3205SPBF

Infineon IRF3205SPBF is a high-efficiency N-channel power MOSFET that is designed to operate in various industrial and commercial applications. It features a low on-state resistance, high switching speed, and a low gate charge, which makes it an ideal choice for various applications that require high performance and reliability. This MOSFET is able to handle high currents of up to 110A and voltage ratings of up to 55V, which makes it suitable for use in automotive, motor control, switching power supplies, and lighting applications.

The MOSFET has a TO-220 package, which offers good thermal performance and easy soldering. It has a voltage-controlled gate, which allows it to be easily integrated into existing control systems. In addition, its high-frequency capabilities make it suitable for use in switch mode power supplies and other high-frequency applications. With its superior performance, durability, and reliability, Infineon IRF3205SPBF is an excellent choice for engineers and technicians looking for efficient and reliable power MOSFETs

Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	146 nC @ 10 V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	3247 pF @ 25 V
Mfr	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package	Tube
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)	200W (Tc)
Product Status	Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs	8mOhm @ 62A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	HEXFET®
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA