onsemi BC807-40LT1G
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See Product Specifications.
See Product Specifications.
Stock Code
031117
031117
Manufacturer / Brand
onsemi
Part Number
BC807-40LT1G
BC807-40LT1G
Unit Price
$0.1230
$0.1230
Factory Lead-Time
21 Weeks
21 Weeks
Short Description
NPN general purpose transistor
NPN general purpose transistor
Datasheet
In Stock: 52010
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.1230 | $0.1230 | |
| 10 | $0.1150 | $1.1500 | -6.5% |
| 100 | $0.0626 | $6.2600 | -49.11% |
| 500 | $0.0385 | $19.2500 | -68.7% |
| 1000 | $0.0263 | $26.3000 | -78.62% |
Description
The ON Semiconductor BC807-40LT1G is a PNP bipolar junction transistor (BJT) designed for use in current amplification and switching applications. The device features a maximum collector-emitter voltage of 45V and a continuous collector current of 0.5A. The transistor is housed in a SOT-23 surface-mount package, making it easy to mount onto circuit boards.
The BC807-40LT1G has a low base-emitter saturation voltage of 0.7V, making it efficient in power-sensitive applications. The device has a gain bandwidth product of 100MHz, indicating a high-frequency performance suitable for RF amplification applications. The device is also designed with a hFE (DC current gain) of at least 100, ensuring stable performance across a wide range of load conditions. Overall, the ON Semiconductor BC807-40LT1G is a dependable and efficient transistor for a variety of applications in electronics and communications
The BC807-40LT1G has a low base-emitter saturation voltage of 0.7V, making it efficient in power-sensitive applications. The device has a gain bandwidth product of 100MHz, indicating a high-frequency performance suitable for RF amplification applications. The device is also designed with a hFE (DC current gain) of at least 100, ensuring stable performance across a wide range of load conditions. Overall, the ON Semiconductor BC807-40LT1G is a dependable and efficient transistor for a variety of applications in electronics and communications
Product Attributes
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power - Max | 300 mW |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
