onsemi BC807-40LT1G

onsemi - BC807-40LT1G

Stock Code
031117

Manufacturer / Brand

Part Number
BC807-40LT1G

Unit Price
$0.1230

Factory Lead-Time
21 Weeks

Short Description
NPN general purpose transistor

In Stock: 52010


Qty Unit Price Total Price Discount
1 $0.1230 $0.1230
10 $0.1150 $1.1500 -6.5%
100 $0.0626 $6.2600 -49.11%
500 $0.0385 $19.2500 -68.7%
1000 $0.0263 $26.3000 -78.62%
Description
The ON Semiconductor BC807-40LT1G is a PNP bipolar junction transistor (BJT) designed for use in current amplification and switching applications. The device features a maximum collector-emitter voltage of 45V and a continuous collector current of 0.5A. The transistor is housed in a SOT-23 surface-mount package, making it easy to mount onto circuit boards.

The BC807-40LT1G has a low base-emitter saturation voltage of 0.7V, making it efficient in power-sensitive applications. The device has a gain bandwidth product of 100MHz, indicating a high-frequency performance suitable for RF amplification applications. The device is also designed with a hFE (DC current gain) of at least 100, ensuring stable performance across a wide range of load conditions. Overall, the ON Semiconductor BC807-40LT1G is a dependable and efficient transistor for a variety of applications in electronics and communications
Product Attributes
Current - Collector (Ic) (Max) 500 mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
Frequency - Transition 100MHz
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT)
Power - Max 300 mW
Supplier Device Package SOT-23-3 (TO-236)
Transistor Type PNP
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45 V

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