NXP BSH114,215
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
000329
000329
Manufacturer / Brand
NXP
Part Number
BSH114,215
BSH114,215
Unit Price
$0.2800
$0.2800
Factory Lead-Time
8 Weeks
8 Weeks
Short Description
JFET transistor, N-Ch, Vgs(off)max=-0.6V, Idssmin=40mA, SOT23-3 package
JFET transistor, N-Ch, Vgs(off)max=-0.6V, Idssmin=40mA, SOT23-3 package
Datasheet
In Stock: 4359
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.2800 | $0.2800 |
Description
NXP BSH114,215 is a general-purpose, low voltage, N-channel MOSFET transistor with a maximum drain-source voltage of 55 V and a continuous drain current of 810 mA. It offers a low on-state resistance to minimize power loss and improve thermal performance. The BSH114,215 is capable of providing reliable switching performance across a wide range of applications, including power management, power switching, and DC-DC conversion.
The BSH114,215 is designed with a small and compact package, which makes it an excellent choice for space-constrained applications. It also features a low threshold voltage, which allows it to operate efficiently at low gate voltages. Moreover, it exhibits an enhanced ESD performance, which makes it an ideal choice for highly reliable applications. Overall, NXP BSH114,215 is a high-performance MOSFET transistor that offers a perfect balance between robustness and efficiency, making it ideal for a broad range of low voltage applications
The BSH114,215 is designed with a small and compact package, which makes it an excellent choice for space-constrained applications. It also features a low threshold voltage, which allows it to operate efficiently at low gate voltages. Moreover, it exhibits an enhanced ESD performance, which makes it an ideal choice for highly reliable applications. Overall, NXP BSH114,215 is a high-performance MOSFET transistor that offers a perfect balance between robustness and efficiency, making it ideal for a broad range of low voltage applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 138 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| Power Dissipation (Max) | 360mW (Ta), 830mW (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
