NXP BUK9Y4R4-40E,115
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See Product Specifications.
See Product Specifications.
Stock Code
000330
000330
Manufacturer / Brand
NXP
Part Number
BUK9Y4R4-40E,115
BUK9Y4R4-40E,115
Unit Price
$0.8120
$0.8120
Factory Lead-Time
24 Weeks
24 Weeks
Short Description
40V, N-channel MOSFET with low on-resistance and high current capability
40V, N-channel MOSFET with low on-resistance and high current capability
Datasheet
In Stock: 9097
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.8120 | $0.8120 | |
| 10 | $0.7260 | $7.2600 | -10.59% |
| 100 | $0.5660 | $56.6000 | -30.3% |
| 500 | $0.4670 | $233.5000 | -42.49% |
Description
The NXP BUK9Y4R4-40E,115 is a Power MOSFET transistor designed for use in high-speed switching power supplies. This device offers a low on-resistance of just 4.4mΩ, allowing for efficient switching with high power ratings. The BUK9Y4R4-40E,115 has a maximum drain-source voltage of 40V and a continuous drain current rating of 85A. It also features a built-in ESD protection diode, increasing the reliability of the device in harsh environments. This Power MOSFET transistor is housed in a compact TO-220 package for easy mounting and can be used in a wide range of applications, including power conversion, motor control, and audio amplifiers.
In addition to its high current handling capabilities, the NXP BUK9Y4R4-40E,115 also features a low gate charge of just 67nC. This results in lower power dissipation and greater efficiency, making it an ideal choice for high-performance applications that require high-frequency switching. The device has a low thermal resistance of 0.6°C/W, which helps prevent overheating and extends the life of the device. With a compact size, high current rating and low on-resistance, the NXP BUK9Y4R4-40E,115 Power MOSFET transistor is an excellent choice for many high-performance power supply applications
In addition to its high current handling capabilities, the NXP BUK9Y4R4-40E,115 also features a low gate charge of just 67nC. This results in lower power dissipation and greater efficiency, making it an ideal choice for high-performance applications that require high-frequency switching. The device has a low thermal resistance of 0.6°C/W, which helps prevent overheating and extends the life of the device. With a compact size, high current rating and low on-resistance, the NXP BUK9Y4R4-40E,115 Power MOSFET transistor is an excellent choice for many high-performance power supply applications
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4077 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | SC-100, SOT-669 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 147W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 25A, 10V |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
