Vishay SI7461DP-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
001018
001018
Manufacturer / Brand
Vishay
Part Number
SI7461DP-T1-GE3
SI7461DP-T1-GE3
Unit Price
$1.3900
$1.3900
Factory Lead-Time
35 Weeks
35 Weeks
Short Description
Power MOSFET Transistor 10A 60V N-Channel 3-Pin TO-252 Tube
Power MOSFET Transistor 10A 60V N-Channel 3-Pin TO-252 Tube
Datasheet
In Stock: 1240
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.3900 | $1.3900 | |
| 10 | $1.2500 | $12.5000 | -10.07% |
| 100 | $1.1100 | $111.0000 | -20.14% |
Description
Vishay SI7461DP-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor-Field-Effect Transistor) designed for use in applications that require high levels of power efficiency and performance. The device has a drain-source voltage range of up to 30 V, making it suitable for use in a wide range of power supply and switching applications. It has a low on-resistance of 3 mΩ, which results in low switching losses and high efficiency. The MOSFET also has a maximum drain current of 85 A, enabling it to handle high power applications.
This MOSFET incorporates advanced silicon technology, with a gate oxide design that maximizes voltage and current control. The device also features advanced packaging technology that enhances thermal performance and reliability. The Vishay SI7461DP-T1-GE3 is an ideal solution for designers looking to achieve high power density in a compact package, without sacrificing performance or reliability. It is suitable for use in high-efficiency power conversion systems, motor control applications, and a wide range of circuit designs that require high performance and reliability
This MOSFET incorporates advanced silicon technology, with a gate oxide design that maximizes voltage and current control. The device also features advanced packaging technology that enhances thermal performance and reliability. The Vishay SI7461DP-T1-GE3 is an ideal solution for designers looking to achieve high power density in a compact package, without sacrificing performance or reliability. It is suitable for use in high-efficiency power conversion systems, motor control applications, and a wide range of circuit designs that require high performance and reliability
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 1.9W (Ta) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 14.4A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
