Vishay SIR826ADP-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
002365
002365
Manufacturer / Brand
Vishay
Part Number
SIR826ADP-T1-GE3
SIR826ADP-T1-GE3
Unit Price
$1.9500
$1.9500
Factory Lead-Time
79 Weeks
79 Weeks
Short Description
High-speed MOSFET driver IC for power electronics applications
High-speed MOSFET driver IC for power electronics applications
Datasheet
In Stock: 656
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.9500 | $1.9500 | |
| 10 | $1.8100 | $18.1000 | -7.18% |
| 100 | $1.6700 | $167.0000 | -14.36% |
Description
The Vishay SIR826ADP-T1-GE3 is a surface mount infrared emitter in a tiny package. It emits infrared light at a wavelength of 850 nm, which is ideal for remote control applications. The emitter is made of a gallium arsenide infrared emitting diode and is housed in a small and compact package.
The emitter has a peak forward current of 100 mA and it can emit a power of 50 mW/sr at a current of 100 mA. It has a forward voltage of 1.4 V and can operate at a temperature range of -40°C to +85°C. It is RoHS compliant and has a moisture sensitivity level of 1. The emitter is also compatible with lead (Pb)-free soldering processes and is designed to withstand a high-temperature lead-free reflow process. Overall, the Vishay SIR826ADP-T1-GE3 is a highly reliable and efficient infrared emitter that can be used in a range of applications such as remote controls, IR proximity sensors, and IR illumination
The emitter has a peak forward current of 100 mA and it can emit a power of 50 mW/sr at a current of 100 mA. It has a forward voltage of 1.4 V and can operate at a temperature range of -40°C to +85°C. It is RoHS compliant and has a moisture sensitivity level of 1. The emitter is also compatible with lead (Pb)-free soldering processes and is designed to withstand a high-temperature lead-free reflow process. Overall, the Vishay SIR826ADP-T1-GE3 is a highly reliable and efficient infrared emitter that can be used in a range of applications such as remote controls, IR proximity sensors, and IR illumination
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 40 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
