Vishay IRF840ASPBF

Vishay IRF840ASPBF is an N-channel power Mosfet designed for switching high power devices such as motors, solenoids, and lamps. It has a high drain-source voltage rating of 500V and can handle a continuous drain current of up to 8A. This Mosfet uses advanced trench technology to increase its performance and reduce its resistance, making it highly efficient and reliable. Additionally, it has a low gate charge of 68nC, which ensures rapid switching and reduces the power losses associated with switching.

What makes the Vishay IRF840ASPBF unique is its advanced heat dissipation design, which allows it to work efficiently in high-temperature environments. It uses a TO-220 package that enables it to dissipate heat quickly from the device's junction. Furthermore, it has a breakdown voltage of 500V and a low on-resistance of 0.85ohms, making it an excellent choice for high-frequency switching applications. In conclusion, Vishay IRF840ASPBF is a high-performance Mosfet that offers low on-resistance, fast switching, and superior heat dissipation capabilities, making it an ideal choice for advanced electronic circuit designs that require high precision and reliability

Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1018 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging	Tube
Power Dissipation (Max)	3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs	850mOhm @ 4.8A, 10V
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA