Vishay SQJ974EP-T1_GE3
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See Product Specifications.
See Product Specifications.
Stock Code
019915
019915
Manufacturer / Brand
Vishay
Part Number
SQJ974EP-T1_GE3
SQJ974EP-T1_GE3
Unit Price
$0.9160
$0.9160
Factory Lead-Time
84 Weeks
84 Weeks
Short Description
MOSFET Power MOSFET 30V 41A 0.004 Ohm
MOSFET Power MOSFET 30V 41A 0.004 Ohm
Datasheet
In Stock: 3151
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.9160 | $0.9160 | |
| 10 | $0.8180 | $8.1800 | -10.7% |
| 100 | $0.6380 | $63.8000 | -30.35% |
| 500 | $0.5270 | $263.5000 | -42.47% |
| 1000 | $0.4160 | $416.0000 | -54.59% |
Description
The Vishay SQJ974EP-T1_GE3 is a high-performance dual N-channel MOSFET designed particularly for commercial and industrial applications. This device features a compact leadless PowerPAK® 1212-8S surface mount package, which delivers a high level of thermal efficiency and reliability. With a low on-resistance, the SQJ974EP-T1_GE3 MOSFET gives designers flexibility in designing efficient switching and power management circuits. This MOSFET can handle up to 30V continuous drain current and has a maximum gate threshold voltage of 2.5V. Therefore, this device offers high performance with low power loss and is suitable for various applications including power distribution, DC-DC converters, and battery management.
The SQJ974EP-T1_GE3 MOSFET is significantly designed to reduce the power consumption and minimize the heating issue in devices. It has a low drain-to-source on-resistance rating, which means that it has low internal resistance and consumes less power while in operation. The device also incorporates advanced packaging technology that allows it to dissipate heat more efficiently and improve its thermal performance. This feature ensures that the device operates at its maximum power while reducing the risk of damage caused by overheating. Overall, the Vishay SQJ974EP-T1_GE3 MOSFET is an efficient, reliable, and cost-effective solution for high-power applications
The SQJ974EP-T1_GE3 MOSFET is significantly designed to reduce the power consumption and minimize the heating issue in devices. It has a low drain-to-source on-resistance rating, which means that it has low internal resistance and consumes less power while in operation. The device also incorporates advanced packaging technology that allows it to dissipate heat more efficiently and improve its thermal performance. This feature ensures that the device operates at its maximum power while reducing the risk of damage caused by overheating. Overall, the Vishay SQJ974EP-T1_GE3 MOSFET is an efficient, reliable, and cost-effective solution for high-power applications
Product Attributes
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | PowerPAK® SO-8 Dual |
| Packaging | Cut Tape (CT) |
| Power - Max | 48W |
| Rds On (Max) @ Id, Vgs | 25.5mOhm @ 10A, 10V |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
