Vishay SI7469DP-T1-GE3
Images are for reference only.
See Product Specifications.
See Product Specifications.
Stock Code
022811
022811
Manufacturer / Brand
Vishay
Part Number
SI7469DP-T1-GE3
SI7469DP-T1-GE3
Unit Price
$1.7300
$1.7300
Factory Lead-Time
45 Weeks
45 Weeks
Short Description
Power MOSFET for high frequency applications
Power MOSFET for high frequency applications
Datasheet
In Stock: 5571
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.7300 | $1.7300 | |
| 10 | $1.5600 | $15.6000 | -9.83% |
| 100 | $1.2500 | $125.0000 | -27.75% |
| 500 | $1.0300 | $515.0000 | -40.46% |
| 1000 | $0.8510 | $851.0000 | -50.81% |
Description
The Vishay SI7469DP-T1-GE3 is a 30V P-Channel MOSFET designed to operate in low voltage applications. With a maximum drain current of 4.5A and low Rds(on) resistance, the SI7469DP-T1-GE3 has excellent switching performance. The package of this MOSFET is a PowerPAK SO-8 which enables higher power density designs and offers better thermal performance compared to the standard SO-8 package. The device features a low gate threshold voltage of -1.0V, which makes it an ideal candidate for low voltage level-shifting applications. The SI7469DP-T1-GE3 also has excellent ESD (Electro-Static Discharge) protection capabilities and can withstand up to 2000V HBM (Human Body Model) of ESD.
In conclusion, the Vishay SI7469DP-T1-GE3 is a P-Channel MOSFET that is specially designed for use in low voltage applications where high switching performance and reliability are required. This MOSFET is offered in a small PowerPAK SO-8 package, which enhances its power density performance and thermal performance. Additionally, with ESD protection and low gate threshold voltage, this MOSFET is an excellent choice for applications requiring low voltage level shifting and high protection capabilities
In conclusion, the Vishay SI7469DP-T1-GE3 is a P-Channel MOSFET that is specially designed for use in low voltage applications where high switching performance and reliability are required. This MOSFET is offered in a small PowerPAK SO-8 package, which enhances its power density performance and thermal performance. Additionally, with ESD protection and low gate threshold voltage, this MOSFET is an excellent choice for applications requiring low voltage level shifting and high protection capabilities
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 40 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 5.2W (Ta), 83.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10.2A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
