Vishay SQJ461EP-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
034583
034583
Manufacturer / Brand
Vishay
Part Number
SQJ461EP-T1-GE3
SQJ461EP-T1-GE3
Unit Price
$1.8900
$1.8900
Factory Lead-Time
88 Weeks
88 Weeks
Short Description
MOSFET, 60V, 70A, 4.4mΩ
MOSFET, 60V, 70A, 4.4mΩ
Datasheet
In Stock: 1452
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $1.8900 | $1.8900 | |
| 10 | $1.7000 | $17.0000 | -10.05% |
| 100 | $1.3900 | $139.0000 | -26.46% |
| 500 | $1.1800 | $590.0000 | -37.57% |
| 1000 | $0.9990 | $999.0000 | -47.14% |
Description
The Vishay SQJ461EP-T1-GE3 is a 100V, 27A, 8mΩ p-channel TrenchFET power MOSFET designed for high efficiency power management applications. It features a low gate charge and very low on-resistance, making it ideal for high-frequency power conversion systems. The MOSFET is housed in a standard DFN 5x6 package and provides high levels of robustness and reliability through its advanced TrenchFET technology.
The device's unique structure allows it to provide excellent switching performance with very low power losses. It has a maximum threshold voltage of -3.3V, which allows easy and reliable gate drive at low voltages. The MOSFET provides a high-performance solution for power switches, battery protection and low-side load switches. It has been designed for use in electronic systems that require high reliability and longevity. Overall, the Vishay SQJ461EP-T1-GE3 power MOSFET offers a cost-effective and efficient solution for high-performance power conversion systems that demand excellent power handling capabilities
The device's unique structure allows it to provide excellent switching performance with very low power losses. It has a maximum threshold voltage of -3.3V, which allows easy and reliable gate drive at low voltages. The MOSFET provides a high-performance solution for power switches, battery protection and low-side load switches. It has been designed for use in electronic systems that require high reliability and longevity. Overall, the Vishay SQJ461EP-T1-GE3 power MOSFET offers a cost-effective and efficient solution for high-performance power conversion systems that demand excellent power handling capabilities
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4710 pF @ 30 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 83W (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 14.4A, 10V |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
