Vishay SUM110P08-11L-E3

Vishay - SUM110P08-11L-E3

Stock Code
002381

Manufacturer / Brand

Part Number
SUM110P08-11L-E3

Unit Price
$3.0200

Factory Lead-Time
101 Weeks

Short Description
Power MOSFET for high frequency switching applications

In Stock: 3281


Qty Unit Price Total Price Discount
1 $3.0200 $3.0200
10 $2.7100 $27.1000 -10.26%
100 $2.2200 $222.0000 -26.49%
Description
The Vishay SUM110P08-11L-E3 is an N-channel MOSFET transistor designed for high power applications. It can handle a maximum drain current of 110A and a drain-source voltage of 80V. The MOSFET has a low on-resistance of only 11mOhm, making it an efficient conductor of electricity. It is housed in a TO-263 package and features a large metal tab for effective heat dissipation. The SUM110P08-11L-E3 has a gate threshold voltage of 2 to 4V and a gate-source voltage of +/- 20V, making it compatible with most gate drivers. In addition, it has excellent switching characteristics, with a low gate charge of 167nC and a fast turn-off time of only 49ns.

Overall, the Vishay SUM110P08-11L-E3 is a reliable and efficient MOSFET transistor suited for high power switching applications such as DC-DC converters, motor drives, and power supplies. Its low on-resistance and fast switching characteristics allow for maximum power efficiency and minimal power loss. The TO-263 package with its metal tab ensures effective heat dissipation, maximizing the MOSFET's reliability and durability. With its high drain current and voltage handling capabilities, the SUM110P08-11L-E3 is a top-performing MOSFET transistor that meets the demands of today's high power applications
Product Attributes
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drain to Source Voltage (Vdss) 80 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 10850 pF @ 40 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging Cut Tape (CT)
Power Dissipation (Max) 13.6W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs 11.2mOhm @ 20A, 10V
Supplier Device Package TO-263 (D²Pak)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3V @ 250µA

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