onsemi FDN8601
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See Product Specifications.
See Product Specifications.
Stock Code
031607
031607
Manufacturer / Brand
onsemi
Part Number
FDN8601
FDN8601
Unit Price
$0.6690
$0.6690
Factory Lead-Time
62 Weeks
62 Weeks
Short Description
Dual N-channel logic level enhancement mode field effect transistor
Dual N-channel logic level enhancement mode field effect transistor
Datasheet
In Stock: 8388
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.6690 | $0.6690 | |
| 10 | $0.5970 | $5.9700 | -10.76% |
| 100 | $0.4660 | $46.6000 | -30.34% |
| 500 | $0.3850 | $192.5000 | -42.45% |
| 1000 | $0.3040 | $304.0000 | -54.56% |
Description
The Onsemi FDN8601 is a MOSFET transistor designed for use in various power management applications such as battery charging, lighting, and voltage conversion. It features a low gate threshold voltage of 1V to 2V, which allows for easy control and low power consumption. The FDN8601 has a maximum drain-source voltage of 30V and a maximum continuous drain current of 3.5A.
With a low on-resistance of 19mΩ at 3.5A, the device provides efficient operation and high power density. It is also highly reliable, with a maximum junction temperature of 150°C and a thermal resistance of 62°C/W. The Onsemi FDN8601 MOSFET transistor is available in a compact SOT-23 package, making it ideal for use in space-constrained applications.
In addition, the device has a high-speed switching capability, which ensures fast power control and reduces switching losses. It also features low gate-to-drain charge, which reduces the switching time and improves thermal performance. With its advanced features and robust design, the Onsemi FDN8601 MOSFET transistor offers an excellent solution for numerous power management applications that require high efficiency and reliability
With a low on-resistance of 19mΩ at 3.5A, the device provides efficient operation and high power density. It is also highly reliable, with a maximum junction temperature of 150°C and a thermal resistance of 62°C/W. The Onsemi FDN8601 MOSFET transistor is available in a compact SOT-23 package, making it ideal for use in space-constrained applications.
In addition, the device has a high-speed switching capability, which ensures fast power control and reduces switching losses. It also features low gate-to-drain charge, which reduces the switching time and improves thermal performance. With its advanced features and robust design, the Onsemi FDN8601 MOSFET transistor offers an excellent solution for numerous power management applications that require high efficiency and reliability
Product Attributes
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 50 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT) |
| Power Dissipation (Max) | 1.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 109mOhm @ 1.5A, 10V |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
