Vishay SI7232DN-T1-GE3
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See Product Specifications.
See Product Specifications.
Stock Code
022545
022545
Manufacturer / Brand
Vishay
Part Number
SI7232DN-T1-GE3
SI7232DN-T1-GE3
Unit Price
$0.5920
$0.5920
Factory Lead-Time
85 Weeks
85 Weeks
Short Description
N-channel MOSFET with a voltage rating of 150 V and a maximum drain current of 14 A in a surface-mount package
N-channel MOSFET with a voltage rating of 150 V and a maximum drain current of 14 A in a surface-mount package
Datasheet
In Stock: 10647
| Qty | Unit Price | Total Price | Discount |
|---|---|---|---|
| 1 | $0.5920 | $0.5920 | |
| 10 | $0.5180 | $5.1800 | -12.5% |
| 100 | $0.3970 | $39.7000 | -32.94% |
| 500 | $0.3140 | $157.0000 | -46.96% |
| 1000 | $0.2510 | $251.0000 | -57.6% |
Description
The Vishay SI7232DN-T1-GE3 is a dual TrenchFET power MOSFET in a DFN 3.3x3.3 package. It is designed for use in power management applications such as battery chargers and DC-DC converters. The MOSFET features low on-resistance and fast switching speeds, making it ideal for high-efficiency designs. Its compact package size allows it to be used in space-constrained designs.
The SI7232DN-T1-GE3 has a maximum drain-source voltage of 30V and can handle a continuous drain current of up to 7.5A. It has a low on-resistance of 12.5mΩ at a gate voltage of 4.5V, and its fast switching speeds help reduce switching losses in high-frequency designs. The MOSFET also has a low gate charge of 9.4nC, which allows it to switch quickly and efficiently. With its high efficiency and small package size, the SI7232DN-T1-GE3 is an ideal choice for power management applications where space is at a premium
The SI7232DN-T1-GE3 has a maximum drain-source voltage of 30V and can handle a continuous drain current of up to 7.5A. It has a low on-resistance of 12.5mΩ at a gate voltage of 4.5V, and its fast switching speeds help reduce switching losses in high-frequency designs. The MOSFET also has a low gate charge of 9.4nC, which allows it to switch quickly and efficiently. With its high efficiency and small package size, the SI7232DN-T1-GE3 is an ideal choice for power management applications where space is at a premium
Product Attributes
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 10V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Packaging | Cut Tape (CT) |
| Power - Max | 23W |
| Rds On (Max) @ Id, Vgs | 16.4mOhm @ 10A, 4.5V |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
