Micron MT25QL01GBBB1EW9-0SIT TR

Micron - MT25QL01GBBB1EW9-0SIT TR

Stock Code
028348

Manufacturer / Brand

Part Number
MT25QL01GBBB1EW9-0SIT TR

Unit Price
$11.8400

Factory Lead-Time
9 Weeks

Short Description
1Gb, 3V, SPI NOR Flash Memory

In Stock: 1831


Qty Unit Price Total Price Discount
1 $11.8400 $11.8400
10 $10.9700 $109.7000 -7.35%
25 $10.7200 $268.0000 -9.46%
50 $10.6600 $533.0000 -9.97%
100 $9.3900 $939.0000 -20.69%
250 $8.9200 $2,230.0000 -24.66%
500 $8.8300 $4,415.0000 -25.42%
1000 $8.5400 $8,540.0000 -27.87%
Description
The Micron MT25QL01GBBB1EW9-0SIT TR is a memory device that is designed for applications that require high-speed read, write, and erase operations. This device is a NAND Flash memory chip that has a capacity of 1GB. It is designed using a 3D NAND technology that allows for a high-density memory chip that is also power-efficient.

The Micron MT25QL01GBBB1EW9-0SIT TR memory device has a quad SPI interface that supports single, dual, quad, and QPI modes. This feature enhances the performance and enables users to achieve faster read and write operations. The device also has an advanced security feature that includes hardware-based AES encryption to protect sensitive data in transmission and storage. The Micron MT25QL01GBBB1EW9-0SIT TR memory device is ideal for use in consumer electronics, automotive, and industrial applications where low power consumption, high-density, and high-speed read and write operations are critical
Product Attributes
Clock Frequency 133 MHz
Digi-Key Programmable Not Verified
Memory Format FLASH
Memory Interface SPI
Memory Organization 128M x 8
Memory Size 1Gbit
Memory Type Non-Volatile
Mounting Type Surface Mount
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 8-WDFN Exposed Pad
Packaging Tape & Reel (TR)
Supplier Device Package 8-WPDFN (8x6) (MLP8)
Technology FLASH - NOR
Voltage - Supply 2.7V ~ 3.6V
Write Cycle Time - Word, Page 8ms, 2.8ms

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